IRF830 Просмотр технического описания (PDF) - Intersil
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IRF830 Datasheet PDF : 7 Pages
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IRF830
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
2000
1600
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
≈
CGD
CDS
+
CGS
0.95
0.85
0.75
-40 -20
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
CISS
800
COSS
400
CRSS
0
1
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
TJ = -55oC
3
TJ = 25oC
TJ = 125oC
2
1
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100
5
2
10
TJ = 150oC
5
TJ = 25oC
2
1
0
1
2
3
4
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 4.5A
15
VDS = 100V
VDS = 250V
10
VDS = 400V
5
0
0
8
16
24
32
40
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-255
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