IRF830 Просмотр технического описания (PDF) - Intersil

Номер в каталоге

Компоненты Описание

Список матч

IRF830

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

Intersil 

IRF830

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF830

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

500

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

500

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

4.5

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

3.0

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

18

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

75

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

V

V

A

A

A

V

W

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

300

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

260

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250µA (Figure 10)

500

Gate to Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA

2.0

Zero-Gate Voltage Drain Current

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

-

On-State Drain Current (Note 2)

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

4.5

Gate to Source Leakage

IGSS VGS = ±20V

-

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 2.5A (Figures 8, 9)

-

Forward Transconductance (Note 2)

gfs

VDS ≥ 10V, ID = 2.7A (Figure 12)

2.5

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

td(ON) VDD = 250V, ID ≈ 4.5A, RG = 12Ω, RL = 54Ω

-

tr

MOSFET Switching Times are Essentially

Independent of Operating Temperature.

-

td(OFF)

-

Fall Time

tf

-

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Qg(TOT) VGS = 10V, ID ≈ 4.5A, VDS = 0.8 x Rated BVDSS

-

Ig(REF) = 1.5mA (Figure 14) Gate Charge is

Qgs

Essentially Independent of Operating Temperature.

-

Gate to Drain “Miller” Charge

Qgd

-

Input Capacitance

CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

Output Capacitance

COSS

-

Reverse-Transfer Capacitance

CRSS

-

Internal Drain Inductance

LD

Measured from the

Modified MOSFET

-

Contact Screw on Tab to Symbol Showing the

Center of Die

Internal Devices

Measured from the Drain Inductances

-

Lead, 6mm (0.25in)

D

From Package to Center

LD

of Die

Internal Source Inductance

LS

Measured from the

G

-

Source Lead, 6mm

LS

(0.25in) From Header to

Source Bonding Pad

S

Thermal Resistance Junction to Case

RθJC

-

Thermal Resistance Junction to Ambient RθJA Free Air Operation

-

TYP MAX UNITS

-

-

V

-

4.0

V

-

25

µA

-

250

µA

-

-

A

-

±100 nA

1.3

1.5

Ω

4.2

-

S

10

17

ns

15

23

ns

33

53

ns

16

23

ns

22

32

nC

3.5

-

nC

11

-

nC

600

-

pF

100

-

pF

20

-

pF

3.5

-

nH

4.5

-

nH

7.5

-

nH

-

1.67 oC/W

-

62.5 oC/W

4-252

Share Link: