FS70SM-06 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

FS70SM-06

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS70SM-06

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

V(BR)DSS

IGSS

IDSS

VGS(th)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

trr

Min

60

—

—

2.0

—

—

50

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

3.0

5.7

0.200

70

6540

1640

790

95

195

290

210

1.0

—

85

Max

—

±0.1

0.1

4.0

7.5

0.263

—

—

—

—

—

—

—

—

1.5

0.83

—

Unit

V

µA

mA

V

mΩ

V

S

pF

pF

pF

ns

ns

ns

ns

V

°C/W

ns

(Tch = 25°C)

Test Conditions

ID = 1 mA, VGS = 0 V

VGS = ±20 V, VDS = 0 V

VDS = 60 V, VGS = 0 V

ID = 1 mA, VDS = 10 V

ID = 35 A, VGS = 10 V

ID = 35 A, VGS = 10 V

ID = 35 A, VDS = 10 V

VDS = 10 V, VGS = 0 V,

f = 1MHz

VDD = 30 V, ID = 35 A,

VGS = 10 V,

RGEN = RGS = 50 Ω

IS = 35 A, VGS = 0 V

Channel to case

IS = 70 A, dis/dt = – 100 A/µs

Rev.2.00 Aug 07, 2006 page 2 of 6

Share Link: