FS70SM-06 Просмотр технического описания (PDF) - Renesas Electronics

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FS70SM-06

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS70SM-06

High-Speed Switching Use

Nch Power MOS FET

Features

• Drive voltage : 10 V

• VDSS : 60 V

• rDS(ON) (max) : 7.5 mΩ

• ID : 70 A

• Integrated Fast Recovery Diode (TYP.) : 85 ns

Outline

RENESAS Package code: PRSS0004ZB-A

(Package name: TO-3P)

4

2, 4

1

23

1

3

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

Symbol

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Ratings

60

±20

70

280

70

70

280

150

– 55 to +150

– 55 to +150

4.8

REJ03G1430-0200

(Previous: MEJ02G0099-0101)

Rev.2.00

Aug 07, 2006

1. Gate

2. Drain

3. Source

4. Drain

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

A

L = 100 µH

A

A

W

°C

°C

g

Typical value

Rev.2.00 Aug 07, 2006 page 1 of 6

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