HM514100DS-7 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM514100DS-7

4,194,304-word × 1-bit Dynamic RAM

Hitachi -> Renesas Electronics 

HM514100D Series

Refresh Cycle

Parameter

CAS setup time (CBR refresh cycle)

CAS hold time (CBR refresh cycle)

RAS precharge to CAS hold time

CAS precharge time in normal mode

HM514100D

-6

-7

Symbol Min Max Min Max

t CSR

10 —

10 —

t CHR

10 —

10 —

t RPC

10 —

10 —

t CPN

10 —

10 —

-8

Min Max

10 —

10 —

10 —

10 —

Unit Notes

ns

ns

ns

ns

Fast Page Mode Cycle

HM514100D

-6

-7

-8

Parameter

Symbol Min Max Min Max Min Max Unit Notes

Fast page mode cycle time

t PC

Fast page mode CAS precharge time tCP

Fast page mode RAS pulse width

t RASC

Access time from CAS precharge

t ACP

RAS hold time from CAS precharge tRHCP

40 —

45 —

50 —

ns

10 —

10 —

10 —

ns

— 100000 — 100000 — 100000 ns 13

— 35

— 40

— 45

ns 3, 14, 16

35 —

40 —

45 —

ns

Fast Page Mode Read-Modify-Write Cycle

Parameter

Fast page mode read-modify-write

cycle time

CAS precharge to WE delay time

HM514100D

-6

-7

Symbol Min Max Min Max

t PCM

60 —

70 —

-8

Min Max

75 —

Unit Notes

ns

t CPW

35 —

40 —

45 —

ns 10

Test Mode Cycle

Parameter

Test mode WE setup time

Test mode WE hold time

HM514100D

-6

-7

Symbol Min Max Min Max

t WS

0—

0—

t WH

10 —

10 —

-8

Min Max

0—

10 —

Unit Notes

ns

ns

9

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