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29F040-90AC Просмотр технического описания (PDF) - Winbond

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29F040-90AC Datasheet PDF : 29 Pages
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BRIGHT
Microelectronics
Inc.
Preliminary BM29F040
Flexible Sector-erase Architecture:
64K bytes per sector
Individual sector, multiple sector or bulk erase capability.
Individual or multiple-sector protection is user definable.
Table 2. Sector Definition
64K byte sector
70000H-7FFFFH
64K byte sector
60000H-6FFFFH
64K byte sector
50000H-5FFFFH
64K byte sector
40000H-4FFFFH
64K byte sector
30000H-3FFFFH
64K byte sector
20000H-2FFFFH
64K byte sector
10000H-1FFFFH
64K byte sector
00000H-0FFFFH
PIN DESCRIPTION
SYMBOL
A0 - A18
A9
DQ0-DQ7
CE
OE
TYPE
I
I
I/O
I
I
NAME AND FUNCTION
ADDRESS INPUTS: for memory addresses. Addresses are internally
latched during a write cycle.
ADDRESS INPUT: When A9 is at 12 Volts the ID mode is accessed. During
this mode A0 decodes between the manufacturer and device IDs.
DATA INPUTS / OUTPUTS: Inputs array data on the fourth CE and WE
cycle during a program command. Inputs commands WE to the Command
register when CE and WE are active. Data is internally latched during the
program cycles. Outputs are from Array and Intelligent Identifier
information. The output pins float to tri-state when the chip is deselected or
the outputs are disabled.
CHIP ENABLE: Activates the device's control logic, input buffers, decoders
and sense amplifiers. CE is active low control; CE high deselects the
memory device and reduces power consumption to standby levels.
OUTPUT ENABLE: OE is active low control signal. This pin gates the
device’s outputs through the data buffers during a read cycle. When CE is
low and OE is high the outputs are tri-state.
WE
Vcc
GND
I WRITE ENABLE: Controls writes to the Command state Machine and
memory array. WE is active low signal. Addresses and Data are latched
during the rising edge of the WE pulse.
DEVICE POWER SUPPLY: Main power source to the device. Its value is
5V ± 10% or 5V ± 5%.
GROUND: The device ground for the internal circuitry.
Table 3
-4-

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