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EM564081

512K x 8 Low Power SRAM

Etron Technology 

EtronTech

EM564081

DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)

Parameter Symbol

Test Conditions

Min Typ* Max Unit

Input low current IIL IIN = 0V to VDD

-1

−

Output low

voltage

Output high

voltage

VOL IOL = 2.1 mA

VOH IOH = -1.0 mA

-

−

VDD -

0.15

−

VDD = 3.6 V −

15

IDD1

Operating current

CE1# = VIL and

CE2 = VIH and

Cycle time

= min

VDD = 2.7 V

−

10

IOUT = 0mA

VDD = 2.3 V −

7

IDD2

Other Input = VIH / VIL

Cycle time = 1µs

−

−

IDDS1 CE1# = VIH or CE2 = VIL

−

−

Standby current IDDS2** CE1# = VDD – 0.2V or

(Note) CE2 = 0.2V

VDD = 3.6 V −

-70/85 VDD = 2.7 V −

VDD = 2.3 V −

1

0.8

0.5

Notes:

-70E/85E VDD = 3.6 V −

5

* Typical value are measured at Ta = 25°C.

** In standby mode with CE1# ≥ VDD - 0.2V, these limits are assured for the condition

CE2 ≥ VDD - 0.2V or CE2 ≤ 0.2V.

1 µA

0.4 V

−V

25

15

mA

12

5

0.5 mA

10

5 µA

3

80

Capacitance (Ta = 25°C; f = 1 MHz)

Parameter

Symbol Min Typ Max Unit Test Conditions

Input capacitance

CIN

−

−

10 pF

VIN = GND

Output capacitance COUT

−

−

10 pF

VOUT = GND

Notes: This parameter is periodically sampled and is not 100% tested.

Preliminary

4

Rev 0.7

January 2001

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