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WSF2816-39H1MA Просмотр технического описания (PDF) - White Electronic Designs => Micro Semi

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WSF2816-39H1MA
White-Electronic
White Electronic Designs => Micro Semi White-Electronic
WSF2816-39H1MA Datasheet PDF : 15 Pages
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WSF2816-39XX
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND VG
-0.5
7.0
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
Parameter
Flash Data Retention
20 years
Flash Endurance (write/erase cycles)
100,000
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol Min
Max
Unit
VCC
4.5
5.5
V
VIH
2.2 VCC + 0.3
V
VIL
-0.5
+0.8
V
SRAM TRUTH TABLE
SCS
OE SWE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
H
H
Read
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
(TA = +25°C)
Test
Symbol
Condition
Max Unit
OE Capacitance
COE VIN = 0V, f = 1.0MHz 50 pF
WE Capacitance
CWE VIN = 0V, f = 1.0MHz 20 pF
CS Capacitance
CCS VIN = 0V, f = 1.0MHz 20 pF
Data I/O Capacitance
CI/O VIN = 0V, f = 1.0MHz 20 pF
Address Line Capacitance
CAD VIN = 0V, f = 1.0MHz 50 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Input Leakage Current
Symbol
ILI
Conditions
VCC = 5.5, VIN = GND to VCC
Min
Max
Unit
10
µA
Output Leakage Current
ILO
SCS = VIH, OE = VIH, VOUT = GND to VCC
10
µA
SRAM Operating Supply Current x 16 Mode
ICCx16
SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5
325
mA
Standby Current
ISB
FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
20
mA
SRAM Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.4
V
SRAM Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
Flash VCC Active Current for Read (1)
ICC1
FCS = VIL, OE = SCS = VIH
120
mA
Flash VCC Active Current for Program or
Erase (2)
ICC2
FCS = VIL, OE = SCS = VIH
140
mA
Flash Output Low Voltage
VOL
IOL = 12.0mA, VCC = 4.5
0.45
V
Flash Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
V
Flash Output High Voltage
VOH2
IOH = -100 µA, VCC = 4.5
VCC -0.4
V
Flash Low VCC Lock Out Voltage
VLKO
3.2
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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