DIM200PHM33-F000 Просмотр технического описания (PDF) - Dynex Semiconductor

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DIM200PHM33-F000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-F000

ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol

Parameter

ICES Collector cut-off current

IGES

VGE(TH)

Gate leakage current

Gate threshold voltage

VCE(sat) †

Collector-emitter

saturation voltage

IF

Diode forward current

IFM

Diode maximum forward

current

VF † Diode forward voltage

Cies Input capacitance

Qg Gate charge

Cres Reverse transfer capacitance

LM Module inductance

RINT Internal transistor resistance

SCData Short circuit current, ISC

Note:

† Measured at the auxiliary terminals

* L is the circuit inductance + LM

Test Conditions

Min

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125°C

VGE = ± 20V, VCE = 0V

IC = 20mA, VGE = VCE

5.5

VGE = 15V, IC = 200A

VGE = 15V, IC = 200A, Tj = 125°C

DC

tp = 1ms

IF = 200A

IF = 200A, Tj = 125°C

VCE = 25V, VGE = 0V, f = 1MHz

±15V

VCE = 25V, VGE = 0V, f = 1MHz

Tj = 125°C, VCC = 2500V

tp ≤ 10μs, VGE ≤ 15V

VCE (max) = VCES – L* x dI/dt

IEC 60747-9

Typ

400

6.5

2.8

3.6

200

400

2.9

3.0

36

5

0.55

40

500

930

Max Units

1

mA

15 mA

nA

7.0

V

V

V

A

A

V

V

nF

μC

nF

nH

μ

A

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

3/8

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