DG9422 Просмотр технического описания (PDF) - Vishay Semiconductors
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DG9422 Datasheet PDF : 10 Pages
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DG9421, DG9422
Vishay Siliconix
TEST CIRCUITS
Rg
S
Vg
3V
IN
GND
V+
V+
D
VO
ΔV O
VO
INX
OFF
ON
OFF
CL
10 nF
V-
OFF
INX
ON
Q = ΔVO x CL
OFF
V-
INX dependent on switch configuration Input polarity determined
by sense of switch.
Figure 3. Charge Injection
V+
C
VS
S1
Rg = 50 Ω
IN1
0 V, 2.4 V
S2
NC
V+
D1
D2
0 V , 2.4 V
IN2
GND
V-
C
XTALK Isolation = 20 log
C = RF bypass
VS
VO
V-
Figure 4. Crosstalk
50 Ω
VO
RL
VS
Rg = 50 Ω
0 V, 2.4 V
S
IN
GND
V+
C
V+
D
VO
V-
C
RL
50 Ω
V-
VS
Off Isolation = 20 log
VO
C = RF Bypass
Figure 5. Off Isolation
IN
0 V, 2.4 V
GND
V+
C
V+
S
D
V-
C
Meter
HP4192A
Impedance
Analyzer
or Equivalent
V-
Figure 6. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70679.
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
www.vishay.com
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