datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать

GP800NSM33 Просмотр технического описания (PDF) - Dynex Semiconductor

Номер в каталоге
Компоненты Описание
Список матч
GP800NSM33
Dynex
Dynex Semiconductor Dynex
GP800NSM33 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
GP800NSM33
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
1600
1400
1200
1000
Tj = 25˚C
Tj = 125˚C
800
600
400
200
0
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, VF - (V)
Fig.5 Diode typical forward characteristics
1800
1600
1400
1200
1000
800
600
400 Tcase = 125˚C
Vge = ±15V
200
Rg(ON) = 3.3
Rg(OFF) = 6.8
CGE = 440nF
0
0 500 1000
1500
2000
2500
3000
Collector-emitter voltage, Vce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]