GP800NSM33 Просмотр технического описания (PDF) - Dynex Semiconductor
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GP800NSM33 Datasheet PDF : 9 Pages
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GP800NSM33
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
I
Collector cut-off current
CES
IGES
VGE(TH)
V
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF
Diode forward current
IFM
Diode maximum forward current
VF
Diode forward voltage
Cies
Input capacitance
L
Module inductance
M
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
V
GE
=
±20V,
V
CE
=
0V
IC = 120mA, VGE = VCE
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, Tcase = 125˚C
DC, T = 125˚C, T = 70˚C
vj
case
tp = 1ms, Tcase = 110˚C
IF = 800A
IF = 800A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
2
mA
-
-
70 mA
-
-
12 µA
4.5
5.5
6.5
V
-
3.4
4.3
V
-
4.3
5
V
-
-
800 A
-
-
1600 A
-
2.3
2.9
V
-
2.4
3
V
-
200
-
nF
-
15
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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