ACR300SG33(2000) Просмотр технического описания (PDF) - Dynex Semiconductor
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ACR300SG33 Datasheet PDF : 6 Pages
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DYNAMIC CHARACTERISTICS
Symbol
Parameter
VTM
IRRM/IDRM
dV/dt
Maximum on-state voltage
Peak reverse and off-state current
Linear rate of rise of off-state voltage
dI/dt
Rate of rise of on-state current
V
T(TO)
rT
IL
I
H
td
Threshold voltage
On-state slope resistance
Latching current
Holding current
Delay time
tr
Rise time
ACR300SG33
Conditions
Min. Max. Units
At 1000A peak, Tcase = 25oC
At VRRM/VDRM, Tcase = 125oC
To VD = 2000V, Gate open circuit, Tj = 125oC
From VDRM to 125A
Gate source 30V, 10Ω
Gate rise time = 100ns, Tj = 125˚C
At Tvj = 125oC
At Tvj = 125oC
VD = 5V, Tj = 25˚C
I = 500A, I = 5A, T = 25˚C
TM
T
j
VD = 3000V
Gate source = 30V, 10Ω
Gate rise time = 100ns
Tj = 25˚C
Tj = 70˚C
See Fig.1. Tj = 25 - 70˚C.
-
-
3000
-
-
-
-
-
-
-
-
2.0
60
-
2000
1.19
0.81
600
300
350
-
50
V
mA
V/µs
A/µs
V
mΩ
mA
mA
ns
ns
ns
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
V
FGM
VRGM
IFGM
PGM
P
G(AV)
Gate trigger voltage
Gate trigger current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Average gate power
Conditions
V
DWM
=
12V,
R
L
=
6Ω,
T
case
=
25oC
V
DWM
=
12V,
R
L
=
6Ω,
T
case
=
25oC
-
-
-
-
Average time 10ms max Forward
Typ. Max. Units
-
5
V
-
500 mA
-
40
V
-
10
V
-
20
A
-
40
W
-
10
W
CURRENT CARRYING CAPABILITY AFTER CHIP SHORT CIRCUIT
In the event of a chip short-circuit due to excess anode-cathode
voltage, the device will handle a high continuous RMS fault
current without significant damage. Rating details are as follows:
Continuous current capability: 300A RMS, ac or dc in either
direction.
Conditions:
1. Device single or double side cooled.
2. Case temperature to be held at 200˚C or less.
3. A suitable high temperature clamp to be used.
4. Chip fault site resistance assumed to be 3mΩ ± 10%.
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