ACR300SG33(2000) Просмотр технического описания (PDF) - Dynex Semiconductor

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ACR300SG33
(Rev.:2000)

Fast Turn-on Asymmetric Thyristor

Dynex Semiconductor 

ACR300SG33

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Conditions

10ms half sine; T = 125oC

case

V =0

R

Max.

6

180

Units

kA

kA2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

T

Virtual junction temperature

vj

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 7.0kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.042 oC/W

- 0.070 oC/W

- 0.092 oC/W

- 0.018 oC/W

-

0.036 oC/W

-

150

oC

-

125

oC

-55 125

oC

6.0 8.0

kN

VD

0.9 x 1600V

0.37 x 1600V

t

td

tr

IG

IG pk

10% IG pk

t

Fig.1 Turn-on time measurement

2/6

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