C67078-S1329-A2 Просмотр технического описания (PDF) - Siemens AG
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C67078-S1329-A2 Datasheet PDF : 9 Pages
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 10 L
Not for new design
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 10 L
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 23 A, VDD = 25 V, RGS = 25 Ω
L = 15.1 µH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1329-A2
Values
Unit
A
23
92
23
1.3
mJ
8
± 14
V
± 20
W
75
-55 ... + 150 °C
-55 ... + 150
≤ 1.67
K/W
≤ 75
E
55 / 150 / 56
Semiconductor Group
1
07/96
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