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BUW12AF Просмотр технического описания (PDF) - Philips Electronics
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BUW12AF
Silicon diffused power transistors
Philips Electronics
BUW12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12F; BUW12AF
2.0
handbook, full pagewidth
VBEsat
VCEsat
(V)
1.5
MGB914
1.0
(1)
(2)
0.5
(3)
0
10
−
1
(4)
1
10
I
C
/I
B
= 5.
(1) V
BE
; T
j
= 25
°
C.
(2) V
BE
; T
j
= 100
°
C.
(3) V
CE
; T
j
= 100
°
C.
(4) V
CE
; T
j
= 25
°
C.
IC (A)
10
2
Fig.6 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
1.6
handbook, full pagewidth
VBE
(V)
1.4
(1)
1.2
(2)
(3)
1.0
MGB911
0.8
0
0.5
1
1.5
2
2.5
IB (A)
3
T
j
= 25
°
C.
(1) I
C
= 8 A.
(2) I
C
= 6 A.
(3) I
C
= 3 A.
Fig.7 Base-emitter voltage as a function of base current; typical values.
1997 Aug 14
7
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