BUW12AF Просмотр технического описания (PDF) - Philips Electronics
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BUW12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12F; BUW12AF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-h
Rth j-a
thermal resistance from junction to external heatsink note 1
note 2
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
3.7
2.8
35
UNIT
K/W
K/W
K/W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUW12F
BUW12AF
VCEO
collector-emitter voltage
BUW12F
BUW12AF
ICsat
collector saturation current
BUW12F
BUW12AF
IC
collector current (DC)
ICM
collector current (peak value)
IB
base current (DC)
IBM
base current (peak value)
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
VBE = 0
CONDITIONS
open base
VCE = 1.5 V
see Figs 2 and 5
see Fig 2
Th ≤ 25 °C; see Fig.4; note 1
Th ≤ 25 °C; see Fig.4; note 2
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
MIN. MAX. UNIT
−
850
V
−
1000 V
−
400
V
−
450
V
−
6
A
−
5
A
−
8
A
−
20
A
−
4
A
−
6
A
−
34
W
−
45
W
−65
+150 °C
−
150
°C
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
VisolM
Cisol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
MAX.
1 500
21
UNIT
V
pF
1997 Aug 14
3
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