BUK7880-55A Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK7880-55A

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

Nexperia

BUK7880-55A

N-channel TrenchMOS standard level FET

100

RDSon

(mΩ)

90

003aab525

80

70

60

50

40

5

10

15 VGS (V) 20

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

2

a

03nc24

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-60 -20

20

60 100 140 180

Tj (°C)

Fig. 10. Normalized drain source on-state resistance

factor as a function of junction temperature

10

VGS

(V)

8

6

VDS (V) = 14

003aab522

VDS (V) = 44

4

2

0

0

5

10 QG (nC) 15

Fig. 11. Gate-source voltage as a function of gate

charge; typical values

103

C

(pF)

102

003aab520

Ciss

Coss

Crss

10

10-1

1

10

VDS (V) 102

Fig. 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

BUK7880-55A

Product data sheet

All information provided in this document is subject to legal disclaimers.

19 June 2015

© Nexperia B.V. 2017. All rights reserved

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