BUK7880-55A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55A Datasheet PDF : 12 Pages
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BUK7880-55A
N-channel TrenchMOS standard level FET
19 June 2015
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
• Suitable for standard level gate drive sources
3. Applications
• 12 V and 24 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID
drain current
VGS = 10 V; Tsp = 25 °C; Fig. 2; Fig. 3
Ptot
total power dissipation Tsp = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 9; Fig. 10
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 7 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55
V
-
-
7
A
-
-
8
W
-
68
80
mΩ
-
-
53
mJ
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