BUK7880-55A/CU Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK7880-55A/CU

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

Nexperia

BUK7880-55A

N-channel TrenchMOS standard level FET

102

ID

(A)

10

Limit RDSon = VDS / ID

003aab530

tp = 10 µ s

100 µs

1 ms

1

DC

10 ms

100 ms

10-1

10-1

1

10

VDS (V)

102

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

10

IAL

(A)

1

10-1

003aab528

(1)

(2)

(3)

10-2

10-3

10-2

10-1

1 tAL (ms) 10

Fig. 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics

Table 6.

Symbol

Rth(j-sp)

Rth(j-a)

Thermal characteristics

Parameter

Conditions

thermal resistance

from junction to solder

point

thermal resistance

from junction to

ambient

Min Typ Max Unit

-

-

15

K/W

-

120 -

K/W

BUK7880-55A

Product data sheet

All information provided in this document is subject to legal disclaimers.

19 June 2015

© Nexperia B.V. 2017. All rights reserved

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