BUK7880-55A/CU Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55A/CU Datasheet PDF : 12 Pages
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Nexperia
BUK7880-55A
N-channel TrenchMOS standard level FET
Symbol
Parameter
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 150 °C
-55 150 °C
Tsp = 25 °C
-
pulsed; tp ≤ 10 µs; Tsp = 25 °C
-
ID = 7 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Fig. 4
-
[1][2][3][4-]
7
A
30
A
53
mJ
-
J
[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 150 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 150 °C
[4] Refer to application note AN10273 for further information.
120
Pder
(%)
80
03aa17
8
ID
(A)
6
003aab532
4
40
2
0
0
50
100
150
200
Tsp (°C)
Fig. 1. Normalized total power dissipation as a
function of solder point temperature
0
0
50
100 Tsp (°C) 150
Fig. 2. Continuous drain current as a function of solder
point temperature
BUK7880-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2015
© Nexperia B.V. 2017. All rights reserved
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