BSM400GA120DN2 Просмотр технического описания (PDF) - Unspecified
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BSM400GA120DN2 Datasheet PDF : 10 Pages
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BSM 400 GA 120 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
2800
W
2400
Ptot 2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
600
A
500
I
C
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 4
A
IC
10 3
tp = 26.0µs
10 2
100 µs
1 ms
10 1
10 ms
DC
10 0
10 0
10 1
10 2
10 3
V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
10 -1
Z
thJC
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -5
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
4
Oct-30-1997
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