BSM400GA120DN2 Просмотр технического описания (PDF) - Unspecified

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BSM400GA120DN2

IGBT-Modules

Unspecified 

BSM 400 GA 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

VGE = VCE, IC = 16 mA

4.5

5.5

6.5

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 400 A, Tj = 25 °C

-

2.5

3

VGE = 15 V, IC = 400 A, Tj = 125 °C

-

3.1

3.7

Zero gate voltage collector current

ICES

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

-

6

8

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

-

24

-

Gate-emitter leakage current

IGES

VGE = 20 V, VCE = 0 V

-

-

400

AC Characteristics

Transconductance

VCE = 20 V, IC = 400 A

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

gfs

216

-

-

Ciss

-

26

-

Coss

-

4

-

Crss

-

2

-

Unit

V

mA

nA

S

nF

2

Oct-30-1997

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