C67076-A1001-A2 Просмотр технического описания (PDF) - Siemens AG
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C67076-A1001-A2 Datasheet PDF : 7 Pages
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Continuous drain current
ID = f (TC)
parameter: VGS ≥ 10 V, T j = 150 ˚C
BSM 181
BSM 181 R
Drain-source breakdown voltage
V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C)
Drain source on-state resistance
R = DS(on) f (Tj)
parameter: ID = 36 A; VGS = 10 V, (spread)
Typical capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
61
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