C67076-A1001-A2 Просмотр технического описания (PDF) - Siemens AG

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C67076-A1001-A2

SIMOPAC® Module

Siemens AG 

BSM 181

BSM 181 R

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified.

Parameter

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = 0.25 mA

Gate threshold voltage

VDS = VGS, ID = 1 mA

Zero gate voltage drain current

VDS = 800 V, VGS = 0

Tj = 25 ˚C

Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0

Drain-source on-state resistance

VGS = 10 V, ID = 23 A

Dynamic Characteristics

Forward transconductance

VDS ≥ 2 × ID × R , DS(on)max. ID = 23 A

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Turn-on time ton (ton = td (on) + tr)

VCC = 400 V, VGS = 10 V

ID = 23 A, RGS = 3.3 Ω

Turn-off time toff (toff = td (off) + tf)

VCC = 400 V, VGS = 10 V

ID = 23 A, RGS = 3.3 Ω

Symbol

min.

V(BR)DSS

VGS(th)

I DSS

IGSS

RDS(on)

800

2.1

–

–

–

–

gfs

15

Ciss

–

Coss

–

Crss

–

td (on)

–

tr

–

td (off)

–

tf

–

Values

Unit

typ.

max.

V

–

–

3.0

4.0

µA

50

250

300

1000

nA

10

100

Ω

0.18

0.24

25

–

S

24

32

nF

1.3

2.0

0.5

0.8

60

–

ns

30

–

370

–

70

–

Semiconductor Group

58

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