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BAP51-06W(2008) Просмотр технического описания (PDF) - NXP Semiconductors.

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BAP51-06W
(Rev.:2008)
NXP
NXP Semiconductors. NXP
BAP51-06W Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
BAP51-06W
General purpose PIN diode
0
Lins
(dB)
0.5
1
(1) (2) (3)
001aai135
0
ISL
(dB)
10
20
001aai136
1.5
30
2
40
2.5
0.5
1
1.5
2
2.5
3
f (GHz)
50
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA
(2) IF = 1 mA
(3) IF = 0.5 mA
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network.
Fig 3. Insertion loss of the diode as a function of
frequency; typical values
Diode zero biased and inserted in series with a 50
stripline circuit; Tamb = 25 °C.
Fig 4. Isolation of the diode as a function of
frequency; typical values
BAP51-06W_1
Product data sheet
Rev. 01 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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