BAP51-06W(2008) Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP51-06W Datasheet PDF : 8 Pages
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NXP Semiconductors
BAP51-06W
General purpose PIN diode
4. Marking
Table 3. Marking
Type number
BAP51-06W
Marking
W7*
Description
* = p: made in Hong Kong
* = t : made in Malaysia
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
IF
forward current
Ptot
total power dissipation Tsp = 90 °C
Tstg
storage temperature
Tj
junction temperature
-
50
V
-
50
mA
-
240
mW
−65
+150
°C
−65
+150
°C
6. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
Unit
250
K/W
7. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
VF
forward voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
Conditions
IF = 50 mA
VR = 50 V
see Figure 1; f = 1 MHz
VR = 0 V
VR = 1 V
VR = 5 V
see Figure 2; f = 100 MHz
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
Min Typ Max Unit
-
0.95 1.1 V
-
-
100 nA
-
0.4 -
pF
-
0.3 0.55 pF
-
0.2 0.35 pF
[1] -
[1] -
[1] -
5.3 9
Ω
3.5 6.5 Ω
1.5 2.5 Ω
BAP51-06W_1
Product data sheet
Rev. 01 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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