HN29W25611 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W25611

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Hitachi -> Renesas Electronics 

HN29W25611 Series

Parameter

Symbol Min Typ Max Unit Test conditions

Notes

SC setup for WE

t SW

CE hold time for OE

t COH

SA (2) to CA (2) delay time tSCD

RDY/Busy setup for SC

t RS

Time to device busy on read tDBR

mode

50

—

—

ns

0

—

—

ns

—

—

30

µs

200 —

—

ns

—

—

1

µs

Busy time on reset mode

t RBSY

—

45

—

µs

Notes: 1. tDF is a time after which the I/O pins become open.

2. tWSD (min) is specified as a reference point only for SC, if tWSD is greater than the specified tWSD (min)

limit, then access time is controlled exclusively by tSAC.

20

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