HN29W25611 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W25611

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Hitachi -> Renesas Electronics 

HN29W25611 Series

Revision Record

Rev. Date

Contents of Modification

Drawn by

0.0 Jan. 8, 1999 Initial issue

M. Shirai

0.1 Jun. 28, 1999 Deletion of VCC = 5.0 V ± 0.5 V operation

Sector program time: 1.0 ms to 3.0 ms

M. Shirai

Single sector erase time: 1.0 ms to 1.5 ms

Error correction: more than 1 bit... to more than 3-bit...

Command Definition: Addition of Data recovery read item

Addition of description for Data recovery read

Change of Status transition

AC Characteristics

Change of parameter name: tOEPS to tOER

tOER min: 200 ns to 250 ns

tOEPS min: 200 ns to 40 ns

tASE typ: 1.0 ms to 1.5 ms

tASE (Program1, 3) typ: 1.5 ms to 3.0 ms

tASE (Program1, 3) max: 37.0 ms to 20.0 ms

tASE (Program2) typ: 1.0 ms to 2.5 ms

tASE (Program2) max: 35.0 ms to 20.0 ms

tASE (Program3) typ: 2.0 ms to 3.5 ms

tASE (Program3) max: 40.0 ms to 30.0 ms

tCDSH min: 0 ns to 30 ns

tOEL min: — to 40 ns

Change of Timing Waveforms

Serial read (1) (2), Serial read (1) with CA before SC,

Serial read (1) with CA after SC and Data recovery read

Notes

Change of description for Enable high system reliability 1

Deletion of description for Enable high system reliability 3

and Prohibit the command except command definition

1.0 Dec. 10, 1999 Features: Change of required architecture

Change of table for Command definition

Mode Description

Addition of description for Data Recovery Write

Addition of figure for Data Recovery Write

Change of Status Transition

Timing Waveforms: Addition of Data Recovery Write

Notes: Change all item

Addition of flowcharts

Change of contents

Addition of Memory structure

Approved by

T. Totsuka

H. Uchida

43

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