HN27C256AFP Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN27C256AFP

32768-word × 8-bit CMOS One Time Electrically Programmable ROM

Hitachi -> Renesas Electronics 

HN27C256AP/AFP Series

AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VPP = VCC)

Test Conditions

• Input pulse levels: 0.45 V to 2.4 V

• Input rise and fall time: ≤ 10 ns

• Output load: 1TTL gate + 100 pF

• Reference levels for measuring timing: Inputs; 0.8 V and 2.0 V

Outputs; 0.8 V and 2.0 V

HN27C256AP-12 HN27C256AP-15

HN27C256AFP-12T HN27C256AFP-15T

Parameter

Symbol Min

Max

Min

Max

Unit Test Conditions

Address to output delay tACC

—

120

—

150

ns

CE = OE = VIL

CE to output delay

t CE

—

120

—

150

ns

OE = VIL

OE to output delay

t OE

—

60

—

70

ns

CE = VIL

OE high to output float tDF

0

40

0

50

ns

CE = VIL

Address to output hold tOH

5

—

5

—

ns

CE = OE = VIL

Note: tDF is defined as the time at which the output achieves the open circuit condition and data is no longer

driven.

Read Timing Waveform

Address

CE

Standby Mode

OE

Data Out

Active Mode

tCE

Standby Mode

tOE

tACC

tDF

tOH

Data Out Valid

6

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