HN27C256AFP Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN27C256AFP

32768-word × 8-bit CMOS One Time Electrically Programmable ROM

Hitachi -> Renesas Electronics 

Read Operation

HN27C256AP/AFP Series

DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VPP = VCC)

Parameter

Symbol Min

Typ

Max

Unit

Test Conditions

Input leakage current

I LI

—

—

2

µA

Vin = 0 V to VCC

Output leakage current

I LO

—

—

2

µA

Vout = 0 V to VCC

VPP current

I PP1

—

1

20

µA

VPP = 5.5 V

Standby VCC current

I SB1

—

—

1

mA

CE = VIH

I SB2

—

1

20

µA

CE = VCC ± 0.3 V

Operating VCC current

I CC1

—

—

30

mA

CE = VIL, Iout = 0 mA

I CC2

—

—

30

mA

f = 10 MHz, Iout = 0 mA

I CC3

—

5

15

mA

f = 1 MHz, Iout = 0 mA

Input low voltage*3

VIL

–0.3*1

—

0.8

V

Input high voltage*3

VIH

2.2

—

VCC + 1.0*2 V

Output low voltage

VOL

—

—

0.45

V

IOL = 2.1 mA

Output high voltage

VOH1

2.4

—

—

V

IOH = –1.0 mA

VOH2

VCC – 0.7 —

—

V

IOH = –100 µA

Notes: 1. VIL min = –1.0 V for pulse width ≤ 50 ns.

2. VIH max = VCC + 1.5 V for pulse width ≤ 20 ns.

If VIH is over the specified maximum value, read operation cannot be guaranteed.

3. Only defined for DC function test. VIL max = 0.45 V, VIH min = 2.4 V for AC function test.

5

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