ADP3408ARU-18 Просмотр технического описания (PDF) - Analog Devices

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ADP3408ARU-18

GSM Power Management System

Analog Devices 

450

ALL LDO, MVBAT, REFOUT,

400 ON_MIN_LOAD (SIMEN = H,

TCXOEN = H)

350

300

VSIM, VCORE, VMEM, VRTC,

ON_MIN_LOAD (SIMEN = H,

TCXOEN = L)

250

200

150

100

3.0

VCORE, VMEM, VRTC,

ON_MIN_LOAD (SIMEN = L,

TCXOEN = L)

3.5

4.0

4.5

5.0

5.5

VBAT – V

TPC 1. Ground Current vs. Battery

Voltage

180

160

VTCXO

140

120

100

80

60

VSIM

40

VMEM

20

0

0

20

40

60

80

LOAD CURRENT – mA

TPC 4. Dropout Voltage vs. Load

Current

Typical Performance Characteristics–ADP3408

10000

1000

+85؇C

–20؇C

+25؇C

100

10

0

0.5

1.0

1.5

2.0

2.5

VRTC – V

TPC 2. RTC I/V Characteristic

1.8

1.6

1.4

RTC REVERSE LEAKAGE

(VBAT = FLOAT)

1.2

1.0

0.8

RTC REVERSE LEAKAGE

(VBAT = 2.3V)

0.6

0.4

0.2

0

25 30 35 40 45 50 55 60 65 70 75 80 85

TEMPERATURE – ؇C

TPC 3. VRTC Reverse Leakage

Current vs. Temperature

3.2

VBAT

3.0

VTCXO 10mV/DIV

VMEM 10mV/DIV

3.2

VBAT

3.0

VTCXO 10mV/DIV

VMEM 10mV/DIV

TIME – 100␮s/DIV

TPC 5. Line Transient Response,

Minimum Loads

TIME – 100␮s/DIV

TPC 6. Line Transient Response,

Maximum Loads

3.2

VBAT

3.0

VAN

10mV/DIV

VCORE 10mV/DIV

VSIM 10mV/DIV

3.2

VBAT

3.0

VTCXO 10mV/DIV

VMEM 10mV/DIV

TIME – 100␮s/DIV

TPC 7. Line Transient Response,

Minimum Loads

TIME – 100␮s/DIV

TPC 8. Line Transient Response,

Maximum Loads

LOAD

20mA

VTCXO 10mV/DIV

3mA

TIME – 200␮s/DIV

TPC 9. VTCXO Load Step

REV. 0

–7–

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