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ADP3408ARU-18

GSM Power Management System

Analog Devices 

ADP3408–SPECIFICATIONS1

(–20؇C ≤ TA ≤ +85؇C, VBAT = VBAT2 = 3 V–5.5 V, CVSIM = CVCORE = CVAN =

CVMEM = 2.2 ␮F, VTCXO = 0.22 ␮F, CVRTC = 0.1 ␮F, CVBAT = 10 ␮F, minimum loads applied on all outputs, unless otherwise noted.)

Parameter

SHUTDOWN SUPPLY CURRENT

VBAT ≤ 2.5 V

(Deep Discharged Lockout Active)

2.5 V < VBAT ≤ 3.2 V

(UVLO Active)

VBAT > 3.2 V

OPERATING GROUND CURRENT

VSIM, VCORE, VMEM, VRTC On

All LDOs On

Symbol

ICC

IGND

UVLO ON THRESHOLD

UVLO HYSTERESIS

VBAT

VBAT

Condition

VBAT = VBAT2 = 2.3 V

VBAT = VBAT2 = 3.0 V

VBAT = VBAT2 = 4.0 V

VBAT = 3.6 V

Minimum Loads

Minimum Loads

Maximum Loads

Min

Typ

7

30

45

225

345

1.0

3.2

200

Max Unit

20

µA

55

µA

80

µA

300

µA

450

µA

3.0

% of max

load

current

3.3

V

mV

DEEP DISCHARGED LOCKOUT ON

THRESHOLD

VBAT

2.4

2.75 V

DEEP DISCHARGED LOCKOUT

HYSTERESIS

VBAT

INPUT HIGH VOLTAGE

VIH

(PWRONIN, TCXOEN, SIMEN,

CHGEN, GATEIN)

INPUT LOW VOLTAGE

VIL

(PWRONIN, TCXOEN, SIMEN,

CHGEN, GATEIN)

INPUT HIGH BIAS CURRENT

IIH

(PWRONIN, TCXOEN, SIMEN,

CHGEN, GATEIN)

INPUT LOW BIAS CURRENT

IIL

(PWRONIN, TCXOEN, SIMEN,

CHGEN, GATEIN)

PWRONKEY INPUT HIGH VOLTAGE VIH

PWRONKEY INPUT LOW VOLTAGE VIL

PWRONKEY INPUT PULL-UP

RESISTANCE TO VBAT

THERMAL SHUTDOWN THRESHOLD2

THERMAL SHUTDOWN HYSTERESIS

ROWX CHARACTERISTICS

ROWX Output Low Voltage

VOL

ROWX Output High Leakage

Current

SIM CARD LDO (VSIM)

Output Voltage

Line Regulation

Load Regulation

IIH

VSIM

∆VSIM

∆VSIM

Output Capacitor Required for Stability CO

Dropout Voltage

VDO

DIGITAL CORE LDO (VCORE)

Output Voltage

ADP3408ARU-2.5

ADP3408ARU-1.8

Line Regulation

Load Regulation

Output Capacitor Required for Stability

VCORE

VCORE

∆VCORE

∆VCORE

CO

PWRONKEY = Low

IOL = 200 µA

PWRONKEY = High

V(ROWX) = 5 V

Line, Load, Temp

Min Load

50 µA ≤ ILOAD ≤ 20 mA,

VBAT = 3.6 V

VO = VINITIAL – 100 mV,

ILOAD = 20 mA

Line, Load, Temp

Line, Load, Temp

Min Load

50 µA ≤ ILOAD ≤ 100 mA,

VBAT = 3.6 V

100

mV

2.0

V

0.4

V

1.0

µA

–1.0

µA

0.7 × VBAT

V

0.3 × VBAT V

70

100

130

kΩ

160

ºC

45

ºC

0.4

V

1

µA

2.80

2.85

2.92

V

2

mV

1

mV

2.2

µF

35

100

mV

2.40

2.45

2.50

V

1.75

1.80

1.85

V

2

mV

7

mV

2.2

µF

–2–

REV. 0

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