RMWP23001 Просмотр технического описания (PDF) - Raytheon Company
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RMWP23001 Datasheet PDF : 7 Pages
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RMWP23001
21-24 GHz Power Amplifier MMIC
Performance
Data
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PRODUCT INFORMATION
RMWP23001, 23GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=400mA and 435mA
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Frequency (GHz)
Gain - 400mA
Gain - 435mA
P1dB - 400mA
P1dB - 435mA
RMWP23001, Typical Performance variation with Temperature
Vd=4V, Idq=400mA, Chip Bonded into 50ohm Test Fixture
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-25°C
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+30°C (room)
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+80°C
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+30°C
-25°C
+80°C
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www.raytheon.com/micro
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Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 5
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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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