RMWP23001 Просмотр технического описания (PDF) - Raytheon Company
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RMWP23001 Datasheet PDF : 7 Pages
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RMWP23001
21-24 GHz Power Amplifier MMIC
Recommended
Application
Schematic Circuit
Diagram
Drain Supply
1 µF
Vd = +4 V
L
10,000pF
PRODUCT INFORMATION
L = Bond Wire
Inductance
RF IN
100pF L
L
L
MMIC Chip
100pF
L
L
100pF
L
L
100pF
L
RF OUT
Recommended
Assembly
Diagram
Ground
(Back of Chip)
L
Gate Supply
Vg
100pF
10,000pF
5mil Thick
Alumina
50-Ohm
RF
Input
100pF
100pF
100pF
Vd
(Positive)
1µF
100pF
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheon.com/micro
100pF
L< 0.015”
(4 Places)
2 mil Gap
Vg
(Negative)
Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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