74LVC1G66 Просмотр технического описания (PDF) - NXP Semiconductors.
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74LVC1G66 Datasheet PDF : 22 Pages
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NXP Semiconductors
74LVC1G66
Bilateral switch
10.1 Test circuits
VCC
VIL
E
IS Y
VI
Z IS
GND
VO
VCC
VIH
E
IS Z
VI
Y
GND
VO
001aag488
VI = VCC or GND and VO = GND or VCC.
Fig 7. Test circuit for measuring OFF-state leakage
current
001aag489
VI = VCC or GND and VO = open circuit.
Fig 8. Test circuit for measuring ON-state leakage
current
10.2 ON resistance
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 10 to Figure 15.
Symbol Parameter
Conditions
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ[1] Max Min
Max
RON(peak)
RON(rail)
ON resistance (peak)
ON resistance (rail)
VI = GND to VCC; see Figure 9
ISW = 4 mA;
VCC = 1.65 V to 1.95 V
ISW = 8 mA; VCC = 2.3 V to 2.7 V
ISW = 12 mA; VCC = 2.7 V
ISW = 24 mA; VCC = 3.0 V to 3.6 V
ISW = 32 mA; VCC = 4.5 V to 5.5 V
VI = GND; see Figure 9
ISW = 4 mA;
VCC = 1.65 V to 1.95 V
ISW = 8 mA; VCC = 2.3 V to 2.7 V
ISW = 12 mA; VCC = 2.7 V
ISW = 24 mA; VCC = 3.0 V to 3.6 V
ISW = 32 mA; VCC = 4.5 V to 5.5 V
VI = VCC; see Figure 9
ISW = 4 mA;
VCC = 1.65 V to 1.95 V
ISW = 8 mA; VCC = 2.3 V to 2.7 V
ISW = 12 mA; VCC = 2.7 V
ISW = 24 mA; VCC = 3.0 V to 3.6 V
ISW = 32 mA; VCC = 4.5 V to 5.5 V
- 34.0 130
-
- 12.0 30
-
- 10.4 25
-
- 7.8 20
-
- 6.2 15
-
- 8.2 18
-
- 7.1 16
-
- 6.9 14
-
- 6.5 12
-
- 5.8 10
-
- 10.4 30
-
- 7.6 20
-
- 7.0 18
-
- 6.1 15
-
- 4.9 10
-
195 Ω
45 Ω
38 Ω
30 Ω
23 Ω
27 Ω
24 Ω
21 Ω
18 Ω
15 Ω
45 Ω
30 Ω
27 Ω
23 Ω
15 Ω
74LVC1G66_6
Product data sheet
Rev. 06 — 27 August 2007
© NXP B.V. 2007. All rights reserved.
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