74AHC1G32 Просмотр технического описания (PDF) - NXP Semiconductors.
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74AHC1G32 Datasheet PDF : 12 Pages
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NXP Semiconductors
74AHC1G32; 74AHCT1G32
2-input OR gate
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC
VI
VO
Tamb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
10. Static characteristics
74AHC1G32
Min Typ
2.0
5.0
0
-
0
-
−40 +25
-
-
-
-
Max
5.5
5.5
VCC
+125
100
20
74AHCT1G32
Min Typ
4.5
5.0
0
-
0
-
−40 +25
-
-
-
-
Max
5.5
5.5
VCC
+125
-
20
Unit
V
V
V
°C
ns/V
ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
For type 74AHC1G32
VIH
HIGH-level VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VIL
LOW-level
VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VOH
HIGH-level VI = VIH or VIL
output voltage IO = −50 µA; VCC = 2.0 V
IO = −50 µA; VCC = 3.0 V
IO = −50 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 3.0 V
IO = −8.0 mA; VCC = 4.5 V
VOL
LOW-level
VI = VIH or VIL
output voltage IO = 50 µA; VCC = 2.0 V
IO = 50 µA; VCC = 3.0 V
IO = 50 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 3.0 V
IO = 8.0 mA; VCC = 4.5 V
II
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
ICC
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
CI
input
capacitance
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
1.5 -
-
1.5 -
1.5
-
V
2.1 -
-
2.1 -
2.1
-
V
3.85 -
-
3.85 -
3.85 -
V
-
-
0.5 -
0.5
-
0.5
V
-
-
0.9 -
0.9
-
0.9
V
-
-
1.65 -
1.65
-
1.65
V
1.9 2.0 -
1.9 -
1.9
-
V
2.9 3.0 -
2.9 -
2.9
-
V
4.4 4.5 -
4.4 -
4.4
-
V
2.58 -
-
2.48 -
2.40 -
V
3.94 -
-
3.8 -
3.70 -
V
-
0 0.1 -
-
0 0.1 -
-
0 0.1 -
-
-
0.36 -
-
-
0.36 -
-
-
0.1 -
-
-
1.0 -
-
1.5 10 -
0.1
-
0.1
-
0.1
-
0.44
-
0.44
-
1.0
-
10
-
10
-
0.1
V
0.1
V
0.1
V
0.55
V
0.55
V
2.0
µA
40
µA
10
pF
74AHC_AHCT1G32_7
Product data sheet
Rev. 07 — 14 May 2009
© NXP B.V. 2009. All rights reserved.
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