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PHP14NQ20T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

30

ID

(A)

20

003aaa221

VGS = 10 V

6V

30

ID

(A)

24

003aaa223

5.5 V

10

5V

4.5 V

0

0

2

4

6

8

10

VDS (V)

16

8

0

0

Tj = 175 οC

Tj = 25 οC

2

4

6

8

VGS (V)

Tj = 25 °C

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Tj = 25 °C and 175 °C; VDS > ID × RDSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

0.8

003aaa222

3

RDSon

4.5 V 5 V

5.5 V

a

(Ω)

2.5

0.6

2

0.4

6V

1.5

0.2

VGS = 10 V

1

003aaa225

0

0

5

10

15

20

ID (A)

0.5

-60

20

100 Tj (οC) 180

Tj = 25 °C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)

Fig 8. Normalized drain source on-state resistance

factor as a function of junction temperature.

9397 750 09535

Product data

Rev. 03 — 11 March 2002

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

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