PHP14NQ20T Просмотр технического описания (PDF) - Philips Electronics
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PHP14NQ20T Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa16
120
I der
(%)
80
03aa24
40
40
0
0
50
100
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
150
200
Tmb (oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
102
RDSon = VDS / ID
10
1
0
0
50
100
150
200
Tmb (oC)
VGS ≥ 10 V
Ider = -I-------I--D--------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa219
tp =
1 µs
10 µs
100 µs
1 ms
DC
10 ms
100 ms
10-1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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