2SK3466(2006) Просмотр технического описания (PDF) - Toshiba

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2SK3466
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

Toshiba 

2SK3466

rth − tw

3

1

Duty = 0.5

0.5

0.3 0.2

0.1

0.1

0.05

0.05 0.02

0.03 0.01

Single pulse

PDM

t

0.01

0.005

T

Duty = t/T

Rth (ch-c) =2.5°C/W

0.003

10 μ 30 μ 100 μ 300 μ 1 m 3 m 10 m 30 m 100 m 300 m 1

3

10

Pulse width tw (s)

Safe operating area

100

50

30 ID max (pulsed) *

10

5 ID max (continuous) *

3

1

DC operation

0.5

Tc = 25°C

0.3

100 μs *

1 ms *

* Single nonrepetitive

0.1

pulse Tc = 25°C

0.05 Curves must be derated

0.03 linearly with increase in

temperature.

0.01

1

3 5 10

30 50

VDSS max

100

300 500 1000

Drain-source voltage VDS (V)

EAS – Tch

200

160

120

80

40

0

25

50

75

100

125

150

Channel temperature (initial) Tch (°C)

15 V

−15 V

BVDSS

IAR

VDD

VDS

Test circuit

RG = 25 Ω

VDD = 90 V, L = 12.2 mH

Wave form

ΕAS

=

1

2

⋅L ⋅I2

⋅

⎜⎜⎝⎛

BVDSS

BVDSS − VDD

⎟⎟⎠⎞

5

2006-11-06

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