2SK3466(2006) Просмотр технического описания (PDF) - Toshiba
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2SK3466 Datasheet PDF : 6 Pages
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5
Common source
VGS = 10 V
Pulse test
4
RDS (ON) − Tc
ID = 5 A
2.5
3
1.2
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
2000
1000
Ciss
500
300
100
50
30
Common source
VGS = 0 V
10 f = 1 MHz
Tc = 25°C
5
0.1
0.3 0.5 1
Coss
3 5 10
Crss
30 50 100
Drain-source voltage VDS (V)
2SK3466
10
Common source
Tc = 25°C
Pulse test
3
IDR − VDS
1
0.5
10
5
0.3
3
1
VGS = 0, −1 V
0.1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
Vth − Tc
5
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD − Tc
80
60
40
20
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
400
VDS
20
Common source
ID = 5 A
Tc = 25°C
Pulse test
16
VDD = 100 V
300
12
200
200
400
8
VGS
100
4
0
0
0
5
10
15
20
25
Total gate charge Qg (nC)
4
2006-11-06
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