2SK3462 Просмотр технического описания (PDF) - Toshiba
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2SK3462 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
5
Common source
VGS = 10 V
Pulse test
4
3
2
ID = 3 A
ID = 1 A
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
10
Ciss
100
Coss
Crss
10
Common source
VGS =
1
0.1
0.3
1
3
10
30
100
Drain-source voltage VDS (V)
2SK3462
100
Common source
Tc = 25°C
Pulse test
IDR – VDS
10
VGS = 10 V
1
5
3
0, −1
0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Drain-source voltage VDS (V)
Vth – Tc
5
Common source
VDS = 10 V
ID = 1 mA
4
Pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
250
25
Common source
ID = 3 A
Tc = 25°C
Pulse test
200
20
150
15
100
50
VDD = 200 V
100
10
50
5
0
0
0
5
10
15
20
25
Total gate charge Qg (nC)
4
2006-11-21
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