2SK3462 Просмотр технического описания (PDF) - Toshiba
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2SK3462 Datasheet PDF : 6 Pages
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2SK3462
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
VGS = ±16 V, VDS = 0 V
⎯
IDSS
VDS = 250 V, VGS = 0 V
⎯
V (BR) DSS ID = 10 mA, VGS = 0 V
250
Vth
VDS = 10 V, ID = 1 mA
1.5
RDS (ON) VGS = 10 V, ID = 1.5 A
⎯
⎪Yfs⎪
VDS = 10 V, ID = 1.5 A
0.5
Ciss
⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
Coss
⎯
tr
10 V
ID = 1.5 A VOUT
⎯
VGS
0V
ton
4.7 Ω
⎯
RL = 67 Ω
tf
⎯
VDD ∼− 100 V
toff
Duty <= 1%, tw = 10 μs
⎯
Qg
⎯
Qgs
VDD ∼− 200 V, VGS = 10 V, ID = 3 A
⎯
Qgd
⎯
Typ.
⎯
⎯
⎯
⎯
1.2
2.2
267
32
98
5
20
5
30
12
6
6
Max
±10
100
⎯
3.5
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
3
A
⎯
⎯
6
A
⎯
⎯
−2.0
V
⎯
125
⎯
ns
⎯
470
⎯
nC
Marking
K3462
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
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