K3069 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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K3069 Datasheet PDF : 10 Pages
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2SK3069
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I DR (A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
3000
1000
Coss
300
Crss
100
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
20
I D = 75 A
80
VGS
16
60
VDS
40
VDD = 50 V
25 V
12
10 V
8
20
VDD = 50 V
4
25 V
10 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
t d(off)
tf
tr
t d(on)
20
10
0.1 0.2
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
0.5 1 2 5 10 20 50 100
Drain Current I D (A)
6
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