K3069 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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K3069

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3069

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 6 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

TO–220AB

D

ADE-208-694I (Z)

10th. Edition

February 1999

G

S

1

2

3

1. Gate

2. Drain(Flange)

3. Source

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