K1697 Просмотр технического описания (PDF) - Renesas Electronics
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K1697 Datasheet PDF : 7 Pages
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2SK1697
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
ID = 0.5 A 0.2 A
3
VGS = 4 V
2
0.1 A
0.5 A
0.2 A
1
10 V
0.1 A
0
–40 0
40
80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
1,000
500
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
80
VDD = 10 V
25 V
16
50 V
60
VDS
12
VGS
40
8
20
VDD
=
50
25
V
V
ID = 0.3 A
4
10 V
0
0
0
0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
VDS = 10 V
2 Pulse Test
1
25°C
0.5
–25°C
0.2
TC = 75°C
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
100
Ciss
Coss
10
Crss
1
VGS = 0
f = 1 MHz
0.1
0
10 20 30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
50
tf
20
VGS =
duty <
10 V, PW
1%, VDD
=.=.
2 µs
30 V
td (off)
10
5 tr
2
td (on)
1
0.05 0.1 0.2 0.5 1 2
5
Drain Current ID (A)
Rev.2.00 May 11, 2006 page 4 of 6
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