K1697 Просмотр технического описания (PDF) - Renesas Electronics

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K1697

Silicon N-Channel MOS FET

Renesas Electronics 

2SK1697

Electrical Characteristics

Item

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Body to drain diode forward voltage

Body to drain diode reverse

recovery time

Note: 1. Pulse test

Symbol

V(BR)DSS

V(BR)GSS

IGSS

IDSS

VGS(off)

RDS(on)

|yfs|

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDF

trr

Min

60

±20

—

—

1.0

—

—

0.25

—

—

—

—

—

—

—

—

—

Typ

—

—

—

—

—

1.3

1.8

0.38

33

17

5

3

8

18

14

1

45

Max

—

—

±10

50

2.0

1.7

2.5

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 0.3 A, VGS = 10 V *1

ID = 0.3 A, VGS = 4 V *1

ID = 0.3 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 0.3 A, VGS = 10 V,

RL = 100 Ω

IF = 0.5 A, VGS = 0

IF = 0.5 A, VGS = 0,

diF/dt = 50 A/µs

Rev.2.00 May 11, 2006 page 2 of 6

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