2SJ222 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SJ222

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ222

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

–100

V

±20

V

–20

A

–80

A

–20

A

35

W

150

°C

–55 to +150

°C

2

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