2SJ222 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ222 Datasheet PDF : 6 Pages
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2SJ222
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D
12 3
1. Gate
G
2. Drain
3. Source
S
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