2SC2899 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2899

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC2899

Electrical Characteristics (Ta = 25°C)

Item

Collector to emitter sustain

voltage

Symbol Min

VCEO(sus)

400

VCEX(sus)

400

Typ

—

—

Emitter to base breakdown

V(BR)EBO

10

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE1

15

—

hFE2

7

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test

t on

—

—

t stg

—

—

tf

—

—

Max Unit

—

V

—

V

—

V

20

µA

50

µA

—

—

1.0 V

1.5 V

1.0 µs

2.0 µs

1.0 µs

Test conditions

IC = 0.1 A, RBE = ∞, L = 100

mH

IC = 0.5 A, IB1 = –IB2 = 0.1 A,

VBE = –5 V, L = 180 µH,

Clamped

IE = 10 mA, IC = 0

VCB = 400 V, IC = 0

VCE = 350 V, RBE = ∞

VCE = 5 V, IC = 0.25 A*1

VCE = 5 V, IC = 0.5 A*1

IC = 0.25 A, IB = 0.05 A*1

IC = 0.5 A, IB1 = –IB2 = 0.1 A,

VCC ≅ 150 V

Maximum Collector Dissipation Curve

12

8

1

0

50

100

150

Case Temperature TC (°C)

Area of Safe Operation

10

iC (peak)

1.0

50 µs

IC (max)

(Continuous)

0.1

Ta = 25°C, 1 Shot

0.01

0.001

1 3 10 30 100 300 1,000

Collector to emitter Voltage VCE (V)

2

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